PART |
Description |
Maker |
ZE-QCL-2S ZE-Q21-2G XE-NA277-2 ZE-Q21-2S ZV2-N21-2 |
General-purpose Enclosed Switches with High Breaking Capacity and High Durability
|
Omron Electronics LLC
|
REC-14LH REC-16LH |
Precision Linear Transducers, Designed for Mounting in Hydraulic or Pneumatic Cylinder, Conductive Plastic Element, Unsealed, Designed for High Pressure Chamber of Cylinders, High Accuracy, Very Good Repeatability
|
Vishay
|
FAN7081MXGF085 FAN7081GF085 FAN7081MGF085 |
The FAN7081_GF085 is a high-side gate drive IC designed for high voltage and high speed driving of MOSFET or IGBT, which operate up to 600V.
|
Fairchild Semiconductor
|
2N4416A |
SMALL SIGNAL N-CHANNEL J-FET THAT IS DESIGNED TO PROVIDE HIGH PERFORMANCE AMPLIFICATION AT HIGH FREQUENCIES
|
Seme LAB
|
VS-70TPS12PBF |
The 70TPS.. High Voltage Series of silicon controlled rectifiers are specifically designed for high and medium power switching and phase control applications
|
Vishay Siliconix
|
CWDSP1650 |
16-Bit, High Performance, Fixed-Point DSP Core Designed For Middle To High-End Telecommunications Applications and Consumer Electronics.(16浣?楂???姐?瀹???板?淇″?澶???ㄦ????涓??妗g?淇″?娑?垂?靛?搴??锛?
|
LSI Corporation
|
IR413 |
High -voltage NPN silicon transistors designed for medium-to-high- voltage inverters
|
New Jersey Semi-Conductor Products, Inc.
|
T2C9-1FJA 424_T2C9-1FJA 424/T2C9-1FJA |
designed for application required high luminous intensity
|
Everlight Electronics Co., Ltd
|
SLD2083CZ |
10 Watt high performance LDMOS transistor designed
|
sirenza
|
HC1225W |
specially designed for high efficient discharge application
|
CSB Battery Co., Ltd.
|
HR1224W |
specially designed for high efficient discharge application
|
CSB Battery Co., Ltd.
|
S3P72P9 S3C72P9 |
SINGLE-CHIP MICROCONTROLLER HAS BEEN DESIGNED FOR HIGH PERFORMANCE USING
|
http:// Samsung semiconductor
|